ULTRATHIN OXIDE-NITRIDE GATE DIELECTRIC MOSFETS

Authors
PARKER CG LUCOVSKY G HAUSER JR
Citation
Cg. Parker et al., ULTRATHIN OXIDE-NITRIDE GATE DIELECTRIC MOSFETS, IEEE electron device letters, 19(4), 1998, pp. 106-108
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
19
Issue
4
Year of publication
1998
Pages
106 - 108
Database
ISI
SICI code
0741-3106(1998)19:4<106:UOGDM>2.0.ZU;2-1
Abstract
The first ultrathin oxide-nitride (O-N) gate dielectrics with oxide eq uivalent thickness of less than 2 nm have been deposited and character ized in n-MOSFET's. The O-N gates, deposited by remote plasma-enhanced CVD, demonstrate reduced gate leakage when compared with oxides of eq uivalent thickness while retaining comparable drive currents.