NONCONTACTING MEASUREMENT OF THICKNESS OF THIN TITANIUM SILICIDE FILMS USING SPECTROSCOPIC ELLIPSOMETER

Spectroscopic ellipsometry has gained increasing attention in semicond uctor process control because the technique is nondestructive and nonc ontacting. This paper demonstrates the capability of spectroscopic ell ipsometer to measure the thickness of conducting thin films of titaniu m silicide, Unlike cross section TEM measurement, this technique does not involve elaborate process of sample preparation, This technique do es not require calibration and is used to determine thickness of silic ide films from few tens of angstrom up to tens of nanometer, The thick ness of titanium silicide film measured at a single point, using spect roscopic ellipsometer and TEM analysis differs by only 4%.