NONSCALING OF MOSFETS LINEAR RESISTANCE IN THE DEEP-SUBMICROMETER REGIME

This paper investigates the scaling properties of deep submicron MOSFE T's and shows that, while in a wide range of channel lengths they can be represented as composed by a scaling intrinsic and a nonscaling par asitic part, this picture does no longer hold for shorter transistors. A nonscaling of the total resistance R-TOT = [V-DS/I-DS] Of short dev ices is observed, and its impact on parasitic resistances and effectiv e channel length extraction is discussed, A possible explanation is su ggested in relation to the two-dimensional substrate doping redistribu tion linked to reverse-short-channel effects.