PHONON ABSORPTION BY D- BAND TAILS IN GE-SB

Uniaxial stress dependence of acoustical phonon absorption in intermed iately doped Ge:Sb has been studied using heat pulse technique. Abrupt ly decreasing LA and FTA phonon scattering in stress interval of 3-7 . 10(8) dyn/cm(2) with further saturation up to 1.9 . 10(9) dyn/cm(2) w as observed. Results obtained from phonon measurements correlate with conductivity activation energy behavior on stress. Acoustical transpar ency stress dependence is assumed to be connected with phonon assisted electron transitions from impurity ground state D-0 to D- band.