NON-MONOTONOUS RELAXATION OF THE LUMINESCENCE INTENSITY OF POROUS SILICON

Authors
KOMPAN ME KUZMINOV EG SHABANOV IJ
Citation
Me. Kompan et al., NON-MONOTONOUS RELAXATION OF THE LUMINESCENCE INTENSITY OF POROUS SILICON, Physica scripta. T, 57(3), 1998, pp. 463-466
Citations number
12
Categorie Soggetti
Physics
Journal title
Physica scripta. T → ACNP
ISSN journal
02811847
Volume
57
Issue
3
Year of publication
1998
Pages
463 - 466
Database
ISI
SICI code
0281-1847(1998)57:3<463:NROTLI>2.0.ZU;2-O
Abstract
The relaxation of the luminescence intensity for porous silicon was fo r the first time investigated with red light excitation. A new type of relaxation behavior was observed under these excitation conditions. T he data on the evolution of the photoluminescence intensity and the ob servation under the same conditions of a persistent absorption saturat ion are described. A model is proposed to explain the observed effects as manifestations of a general carrier relaxation process.