SUBPIXEL SENSITIVITY MAP FOR A CHARGE-COUPLED-DEVICE SENSOR

The sensitivity across a solid state detector array varies as a result of differences in transmission, diffusion and scattering properties o ver the sensor. This variation will occur over a range of scale length s and its knowledge is of importance for improved device design and in a variety of applications, for example, event centroiding in photon c ounting systems. A measurement of the sensitivity variation on a subpi xel scale for a two-phase front-illuminated CCD is reported. The measu rement is made using a scanning reflection microscope. A variation in sensitivity between the phases within a pixel is clearly observed, as well as variations on a much smaller spatial scale. (C) 1998 Society o f Photo-Optical Instrumentation Engineers. [S0091-3286(98)03103-1].