MOCVD OF ZIRCONIA THIN-FILMS BY DIRECT LIQUID INJECTION USING A NEW CLASS OF ZIRCONIUM PRECURSOR

Authors
JONES AC LEEDHAM TJ WRIGHT PJ CROSBIE MJ LANE PA WILLIAMS DJ FLEETING KA OTWAY DJ OBRIEN P
Citation
Ac. Jones et al., MOCVD OF ZIRCONIA THIN-FILMS BY DIRECT LIQUID INJECTION USING A NEW CLASS OF ZIRCONIUM PRECURSOR, CHEMICAL VAPOR DEPOSITION, 4(2), 1998, pp. 46
Citations number
18
Categorie Soggetti
Materials Science, Coatings & Films",Electrochemistry,"Physics, Condensed Matter
Journal title
CHEMICAL VAPOR DEPOSITION → ACNP
ISSN journal
09481907
Volume
4
Issue
2
Year of publication
1998
Database
ISI
SICI code
0948-1907(1998)4:2<46:MOZTBD>2.0.ZU;2-V
Abstract
Communication: Thin films of zirconia and zirconates have a variety of important applications. MOCVD is an attractive technique for the prep aration of these films, but there are a number of drawbacks associated with the currently used Zr precursors. This paper reports on a new cl ass of precursor of the form [Zr(OR)(2)(thd)(2)], where R = Pr-i or Bu -t, which allows growth by liquid injection of ZrO2 under transport-co ntrolled conditions at significantly lower temperatures than can be ac hieved with conventional sources.