STRESS AND RELIEF OF MISFIT STRAIN OF GE SI(001)/

The intrinsic stress of the Stranski-Krastanov system Ge/Si(001) was i nvestigated in the range 700-1050 K. Characteristic stress features in dicate that the relief of the misfit strain proceeds mainly in two ste ps: (i) by the formation of 3D islands on top of the Ge wetting layer and (ii) via misfit dislocations in larger 3D islands and upon their p ercolation. The temperature dependence of strain relief by 3D islands as well as their nucleation and growth behavior support a kinetic path way for 3D islanding.