DISSOCIATIVE ELECTRON-ATTACHMENT IN NANOSCALE ICE FILMS - THICKNESS AND CHARGE TRAPPING EFFECTS

Citation
Wc. Simpson et al., DISSOCIATIVE ELECTRON-ATTACHMENT IN NANOSCALE ICE FILMS - THICKNESS AND CHARGE TRAPPING EFFECTS, The Journal of chemical physics, 108(12), 1998, pp. 5027-5034
Citations number
50
Categorie Soggetti
Physics, Atomic, Molecular & Chemical
ISSN journal
00219606
Volume
108
Issue
12
Year of publication
1998
Pages
5027 - 5034
Database
ISI
SICI code
0021-9606(1998)108:12<5027:DEINIF>2.0.ZU;2-D
Abstract
The yield and kinetic energy (KE) distributions of D- ions produced vi a dissociative electron attachment (DEA) resonances in nanoscale D2O i ce films are collected as a function of film thickness. The B-2(1), (2 )A(1), and B-2(2) DEA resonances shift to higher energies and their D- ion yields first increase and then decrease as the D2O films thicken. The D- KE distributions also shift to higher energy with increasing f ilm thickness. We interpret the changes in the DEA yield and the D- KE distributions in terms of modifications in the electronic and geometr ic structure of the surface of the film as it thickens. A small amount of charge build-up occurs following prolonged electron beam exposure at certain energies, which primarily affects the D- KE distributions. Charge trapping measurements indicate that an enhancement in the trapp ing cross section occurs at energies near zero and between 6 and 10 eV . (C) 1998 American Institute of Physics.