DETERMINATION OF DONOR DIFFUSION-COEFFICIENTS IN P-TYPE SEMICONDUCTORS FROM CAPACITANCE TRANSIENTS - APPLICATION TO CU AND AG DIFFUSION IN CD-RICH HG1-XCDXTE

A method is presented for determining the diffusion coefficients of do nors at relatively low temperatures in p-type semiconductors. This met hod is based on capacitance transient measurements at different temper atures. The law describing the capacitance transient is given, allowin g the determination of the donor diffusion coefficient. The study of C u and Ag diffusion in Hg1-xCdxTe (x = 0.7 and x = 1) is presented as a n example. Diffusion data are in good agreement with previous results. In the case of Ag, a change in slope has been found in the Arrhenius plots. A mechanism which involves acceptor-donor complex formation is proposed to explain such behaviour.