INGAASP GROWN BY HE-PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY FOR 1.55 MU-M HIGH-SPEED PHOTODETECTORS

Authors
KANG JU FRANKEL MY ESMAN RD THOMPSON DA ROBINSON BJ
Citation
Ju. Kang et al., INGAASP GROWN BY HE-PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY FOR 1.55 MU-M HIGH-SPEED PHOTODETECTORS, Applied physics letters, 72(11), 1998, pp. 1278-1280
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
11
Year of publication
1998
Pages
1278 - 1280
Database
ISI
SICI code
0003-6951(1998)72:11<1278:IGBHME>2.0.ZU;2-U
Abstract
Simple photoconductive optical detectors for 1.55 mu m wavelength have been fabricated on InGaAsP grown by He-plasma assisted molecular beam epitaxy. Characterization of the photodetectors shows that their spee d is determined by the free carrier trapping time, with a full width a t half-maximum impulse response of approximately 6 ps. (C) 1998 Americ an Institute of Physics.