A FULLERENE DERIVATIVE AS AN ELECTRON-BEAM RESIST FOR NANOLITHOGRAPHY

We have explored the application of chemical derivatives of C-60 as hi gh-resolution electron beam resists, Facile spin coating was used to p roduce similar to 100-nm-thick films of a C-60 tris adduct (three func tional groups) on Si surfaces. We find that these films function as hi gh-resolution negative resists for electron beam lithography using mon ochlorobenzene as a developer. The film has a sensitivity of similar t o 1 mC/cm(2) for 20 keV electrons, an order of magnitude higher than t hat of C-60 itself, and the dry-etch durability is much better than th at of conventional novolac based electron beam resists, Features with widths of 20 nm were produced. (C) 1998 American Institute of Physics.