We report the observation of spin relaxation of excitons in zero-dimen
sional semiconductor nanostructures. The spin relaxation is measured i
n InGaAs quantum disks by using a polarization dependent time-resolved
photoluminescence method. The spin relaxation time in a zero-dimensio
nal quantum disk is as long as 0.9 ns at 4 K, which is almost twice as
long as the radiative recombination lifetime and is considerably long
er than that in quantum wells. The temperature dependence of the spin
relaxation time suggests the importance of exciton-acoustic phonon int
eraction. (C) 1998 American Institute of Physics.