CHEMICALLY ASSISTED ION-BEAM ETCHING OF SUBMICRON FEATURES IN GASB

Authors
NAGY G AHMAD RU LEVY M OSGOOD RM MANFRA MJ TURNER GW
Citation
G. Nagy et al., CHEMICALLY ASSISTED ION-BEAM ETCHING OF SUBMICRON FEATURES IN GASB, Applied physics letters, 72(11), 1998, pp. 1350-1352
Citations number
23
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
11
Year of publication
1998
Pages
1350 - 1352
Database
ISI
SICI code
0003-6951(1998)72:11<1350:CAIEOS>2.0.ZU;2-P
Abstract
We describe the use of chemically assisted ion beam etching to realize smooth, highly anisotropic features in GaSb. The measured etch rates are comparable to those of GaAs, and are fitted to a model that assume s the formation of trichloride etch product species. (C) 1998 American Institute of Physics.