SELF-FORMING INAS GAP QUANTUM DOTS BY DIRECT ISLAND GROWTH/

Authors
LEON R LOBO C CHIN TP WOODALL JM FAFARD S RUVIMOV S LILIENTALWEBER Z KALCEFF MAS
Citation
R. Leon et al., SELF-FORMING INAS GAP QUANTUM DOTS BY DIRECT ISLAND GROWTH/, Applied physics letters, 72(11), 1998, pp. 1356-1358
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
11
Year of publication
1998
Pages
1356 - 1358
Database
ISI
SICI code
0003-6951(1998)72:11<1356:SIGQDB>2.0.ZU;2-7
Abstract
InAs/GaP semiconductor quantum dots (QDs) were spontaneously formed us ing direct island growth (Volmer-Weber) rather than Stranski-Krastanow (S-K) growth. Structural investigations of InAs/GaP QDs suggest kinet ically limited growth and show a broad size distribution Photoluminesc ence and cathodoluminescence spectroscopy reveal large inhomogeneous b roadening with the emission peak centering at 1.7 eV, Device applicati ons exploiting broad optical emission in QDs are discussed. (C) 1998 A merican Institute of Physics.