OXIDE INTERFACIAL PHASES AND THE ELECTRICAL-PROPERTIES OF SRBI2TA2O9 THIN-FILMS PREPARED BY PLASMA-ENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Authors
SEONG NJ YANG CH SHIN WC YOON SG
Citation
Nj. Seong et al., OXIDE INTERFACIAL PHASES AND THE ELECTRICAL-PROPERTIES OF SRBI2TA2O9 THIN-FILMS PREPARED BY PLASMA-ENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 72(11), 1998, pp. 1374-1376
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
11
Year of publication
1998
Pages
1374 - 1376
Database
ISI
SICI code
0003-6951(1998)72:11<1374:OIPATE>2.0.ZU;2-L
Abstract
Bi-layered ferroelectric SrBi2Ta2O9 (SBT) films were successfully prep ared on Pt/SiB2/Si and Pt/Ti/SiO2/Si substrates at 550 degrees C by pl asma-enhanced metalorganic chemical vapor deposition. A BTO (Bi4Ti3O12 or Bi2Ti4O11) phase formed at the interface between SBT films and Pt/ Ti/SiO2/Si during the SBT deposition at 550 degrees C. The BTO phase d ecreased the leakage current density of the SET films. The leakage cur rent densities of SBT films deposited on Pt/Ti/SiO2/Si and Pt/SiO2/Si substrates were about 5.0 X 10(-8) and 5.0 X 10(-7) A/cm(2) at an appl ied field of 300 kV/cm, respectively. The SBT films were controlled by Schottky emission, The Schottky barrier heights of SBT films deposite d on Pt/Ti/SiO2/Si and Pt/SiO2/Si were about 1.2 and 0.8 eV, respectiv ely. (C) 1998 American Institute of Physics.