Ya. Aleshchenko et al., TRANSFORMATION OF THE DIMENSIONALITY OF EXCITONIC STATES IN QUANTUM-WELLS WITH ASYMMETRIC BARRIERS IN AN ELECTRIC-FIELD, JETP letters, 67(3), 1998, pp. 222-226
A transformation of the dimensionality of excitonic states from 2D to
3D with increasing external electric field is observed in single GaAs/
AlxGa1-xAs quantum-well structures with asymmetric barriers. The bindi
ng energy of a 2D exciton remains constant over a wide range of variat
ion of the field, since the decrease in the binding energy is compensa
ted by increasingly larger penetration of the electronic wave function
into the barrier layer, where the exciton binding energy is higher be
cause the effective mass is larger and the dielectric constant of AlGa
As is lower than that of GaAs. When the maximum of the electron wave f
unction is displaced into the barrier as the field increases, the exci
ton binding energy decreases. As the field increases further, a 2D exc
iton transforms into a quasi-3D exciton, with a heavy hole in the quan
tum well and an electron in a resonant above-barrier state. (C) 1998 A
merican Institute of Physics.