The adsorption of Br-2 on Cu(100) and the further reaction of Br-2 wit
h Cu(100) to form CuBr was studied using scanning tunneling microscopy
(STM). Although low energy electron diffraction indicated the formati
on of a c(2 x 2) layer immediately upon the dissociative adsorption of
Br-2, thermal fluctuations in the adsorbed layer prevented this struc
ture from being observed until the coverage exceeded roughly 80% of sa
turation. As the c(2 x 2) layer saturated, the substrate steps were ob
served to rotate to align parallel to the (100) close-packed direction
s of the adlayer. The rotated steps exhibited thermal fluctuations tha
t STM movies showed were due to kink diffusion. Further Br-2 exposure
greatly decreased the step fluctuations and resulted in the formation
of bulk CuBr. The former was due to a decreased kink density that allo
wed more Br atoms to be accommodated in the c(2 x 2) layer. The [100]
steps were the predominant source of Cu atoms for the reaction to CuBr
. As the reaction progressed the steps receded until they reached anot
her step and formed a {110} facet. Defects such as kinks and domain bo
undaries were not observed to contribute significantly to the reactivi
ty of the steps. The reaction at the steps was not uniform; certain se
gments of the steps were found to be far more reactive than others. An
nealing the c(2 x 2) layer increased the lengths of the reactive segme
nts, consistent with previous temperature programmed desorption data t
hat showed that annealing increases the reactivity of the surface. Com
parison of STM images of reactive and unreactive sections of the steps
suggested that the variation in reactivity is due to a thermally driv
en relaxation of the atomic positions around the step. The CuBr formed
at the steps was mobile and aggregated into clusters at locations tha
t showed no obvious correlation with the locations of changes in the s
urface structure associated with consumption of the Cu surface, The im
plications of these results on oxidation and etching reactions of meta
l surfaces are discussed. (C) 1998 Elsevier Science B.V.