BULK AND SURFACE ELECTRONIC-STRUCTURE OF INAS(110)

The InAs(110) cleavage surface has been investigated by angle-resolved photoelectron spectroscopy. A separation between the In 4d(5/2) bulk component and the valence band maximum of 16.8 eV is found to be consi stent with normal emission spectra. Experimental energy band dispersio ns, E-i(k), for the four bulk valence bands are established along the Sigma-line of the bulk Brillouin zone. A bulk band structure calculati on utilizing the augmented plane-wave method is made. The experimental and calculated E-i(k) dispersions are found to be in good agreement w ith each other. E-i(k(parallel to)) dispersions for two surface-relate d structures are established along the lines <(Gamma)over bar>-(M) ove r bar and (Y) over bar-(M) over bar of the surface Brillouin zone. (C) 1998 Elsevier Science B.V.