This paper reports conduction mechanism in a-Sb2Se3 over a wide range
of temperature (238 to 338 K) and frequency (5 Hz to 100 kHz). The d.c
. conductivity measured as a function of temperature shows semiconduct
ing behaviour with activation energy Delta E = 0.42 eV Thermally induc
ed changes in the electrical and dielectric properties of a-Sb2Se3 hav
e been examined. The a.c. conductivity in the material has been explai
ned using modified CBH model. The band conduction and single polaron h
opping is dominant above room temperature. However, in the lower tempe
rature range the bipolaron hopping dominates.