THE ELECTRONIC-ENERGY LOSS OF 100 KEV HEAVY-IONS IN MEDIUM-ENERGY ION-SCATTERING ANALYSIS OF A TA2O5 ULTRATHIN-FILM

To optimize the depth resolution of Medium Energy Ion Scattering Spect roscopy (MEIS), a 10 nm Ta2O5 thin film on a Si(100) substrate was ana lyzed by MEIS using H+ and heavy ions such as Li+, N+ and Ne+ ions. Th e use of heavy ions such as Li+ and N+ increased the electronic stoppi ng powers 2-3 times but it also increased the electronic straggling co mpared to H+ ions, For Nef ions, the ion neutralization problem was so severe that the scattering ion intensity from the subsurface layer wa s attenuated very rapidly and a strong doubly ionized Ne++ peak was ob served. For 100 keV N+ and Ne+ ions, multiple scattering peaks were ob served.