TIME-RESOLVED DISLOCATION-RELATED LUMINESCENCE IN STRAIN-RELAXED SIGESI/

Authors
FUKATSU S MERA Y INOUE M MAEDA K
Citation
S. Fukatsu et al., TIME-RESOLVED DISLOCATION-RELATED LUMINESCENCE IN STRAIN-RELAXED SIGESI/, Thin solid films, 294(1-2), 1997, pp. 33-36
Citations number
16
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
294
Issue
1-2
Year of publication
1997
Pages
33 - 36
Database
ISI
SICI code
0040-6090(1997)294:1-2<33:TDLISS>2.0.ZU;2-M
Abstract
Time-resolved photoluminescence (PL) of dislocation-related features ( D1-D4) was studied in strain-relaxed molecular beam epitaxy SiGe/Si(10 0). Low-temperature decay transients are essentially non-exponential f or all D bands. The D1, D2 bands are characterized by long (tau > 200 ns) decay times while short (tau < 60 ns) decay times were observed fo r the D3, D4 bands. Radiative lifetimes as derived from measured decay times imply free-to-bound character of PL origins of the D1, D2 bands while bound-to-bound character for the D3, D4 bands.