COMBINED CHARACTERIZATION OF GROUP-IV HETEROSTRUCTURES AND MATERIALS BY SPECTROSCOPIC ELLIPSOMETRY AND GRAZING X-RAY REFLECTANCE

Different kinds of group IV heterostructures have been studied by mean s of spectroscopic ellipsometry (SE) and grazing X-ray reflectance (GX R). GXR was used to determine the thicknesses of the SiGe and Si layer s in SiGe/Si and Si/SiGe/Si structures without ambiguity. Precise opti cal indices can be deduced using SE on single-layer samples. The same database is used to analyze more complex double-layer structures. SiC samples obtained by excimer laser annealing of carbon-implanted silico n have also been studied by SE. We show that the amorphous silicon pro file of the samples versus the energy density used for the annealing c an be accurately determined.