PREDICTION OF SI CONTENTS TO SUPPRESS THE FORMATION OF AL4C3 IN THE SICP AL COMPOSITE/

Interfacial phenomena in the SiCp/Al composite were investigated using SEM, DSC, AES, and XRD. The value of these combined techniques in elu cidating detailed interfacial phenomena was demonstrated. Theoretical calculations of equilibrium Si contents required to prevent the format ion of Al4C3 in the SiC/Al composite were performed by taking the vari ations in Al and Si activities as well as those of other compounds int o account for the calculations. Based on calculations, there exists a transition temperature at which a sudden increase in equilibrium Si co ntents required to prevent Al4C3 formation occurs. Experimental measur ements of equilibrium Si contents were also performed to confirm the t heoretical results. (C) 1998 Acta Metallurgica Inc.