THERMOELECTRIC-POWER OF THE SI SI0.8GE0.2 2-DIMENSIONAL HOLE GAS/

Authors
MIRONOV OA GERLEMAN IG PHILLIPS PJ PARKER EHC TSAOUSIDOU M BUTCHER PN WHALL TE
Citation
Oa. Mironov et al., THERMOELECTRIC-POWER OF THE SI SI0.8GE0.2 2-DIMENSIONAL HOLE GAS/, Thin solid films, 294(1-2), 1997, pp. 182-185
Citations number
13
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
294
Issue
1-2
Year of publication
1997
Pages
182 - 185
Database
ISI
SICI code
0040-6090(1997)294:1-2<182:TOTSS2>2.0.ZU;2-J
Abstract
The thermal conductivities and the thermoelectric powers of two-dimens ional hole gases in fully strained Si/Si0.8Ge0.2 heterostructures have been measured for the first lime in the temperature range 3 K to 25 K , and for carrier sheet densities in the range 0.2 to 1 x 10(12) cm(-2 ). The thermopower is dominated by the phonon drag contribution and a fit to theory yields a value of 4.5 eV for the acoustic phonon deforma tion potential, with no other adjustable parameters. (C) 1997 Elsevier Science S.A.