ANISOTROPIC JC-UPSILON MEASUREMENTS AT LOW FIELDS ON A-MOSI THIN-FILMS - EVIDENCE OF A 2-DIMENSIONAL REGIME

Transport critical current versus applied field inclination (Jc - thet a plots) have been made on a-MoSi thin films in low fields of order 0. 04 T. The applied held was rotated (at fixed magnitude) in a plane bot h parallel (phi = 0 degrees) and perpendicular (phi = 90 degrees) to t he film's longitudinal axis, The results indicate a Je governed by the perpendicular component of the applied held as is sometimes observed in the layered high-temperature superconducting (HTS) thin films. Thes e results also suggest that the peaks in the Jc-theta occur when the v ortex density coming from external sources becomes comparable to that induced internally from the self field of the transport current, A bro ad peak ill the dr when the field is incident perpendicular to the fil m surface is observed on the silicon substrate film but not on tile sa pphire substrate film. Possible seasons for this broad peak are discus sed.