ELECTROPHYSICAL STUDIES OF 2D-HOLE SPECTRAL CHARACTERISTICS AND PECULIARITIES OF SCATTERING MECHANISMS IN GE LAYERS OF GE-GE1-XSIX HETEROSTRUCTURES

Authors
ORLOV LK POTAPOV AV RUBTSOVA RA ARAPOV Y GORODILOV N SHELUSHININA N YANG FH LEOTIN J GOIRAN M
Citation
Lk. Orlov et al., ELECTROPHYSICAL STUDIES OF 2D-HOLE SPECTRAL CHARACTERISTICS AND PECULIARITIES OF SCATTERING MECHANISMS IN GE LAYERS OF GE-GE1-XSIX HETEROSTRUCTURES, Thin solid films, 294(1-2), 1997, pp. 208-210
Citations number
7
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
294
Issue
1-2
Year of publication
1997
Pages
208 - 210
Database
ISI
SICI code
0040-6090(1997)294:1-2<208:ESO2SC>2.0.ZU;2-I
Abstract
The longitudinal effective mass of 2D holes in Ge layers of a Ge-G(1-x )Si(x) multiquantum well structure was measured by different methods i ncluding the electrophysical method in strong electric fields, Shubnik ov-de-Haas oscillations, and cyclotron resonance. A dependence of the hole effective mass on the hole energy (Fermi levels) is studied. A sc attering mechanism providing the existence of localized states between Landau levels is discussed. (C) 1997 Elsevier Science S.A.