THERMAL EMISSION OF HOLES FROM CONFINED LEVELS IN STRAINED SIGE CHANNEL P-MOSFETS

We report preliminary results of current transient spectroscopy (CTS) investigations performed on a buried strained Si0.85Ge0.15 channel p-M OSFET structure. Measurements give an activation energy E-a = 83 +/- 1 0 meV. In these structures the fundamental confined level energy E-0 = 69 meV. We propose that the above activation energy corresponds to th ermal emission of holes from E-0 since the summation E-a + E-0 = 152 /- 20 meV is in good agreement with the measured valence band disconti nuity (Delta E-v) values reported in the literature.