DC ELECTRIC-FIELD-INDUCED 2ND-HARMONIC GENERATION SPECTROSCOPY OF THESI(001)-SIO2 INTERFACE - SEPARATION OF THE BULK AND SURFACE NONLINEARCONTRIBUTIONS

Authors
AKTSIPETROV OA FEDYANIN AA MELNIKOV AV DADAP JI HU XF ANDERSON MH DOWNER MC LOWELL JK
Citation
Oa. Aktsipetrov et al., DC ELECTRIC-FIELD-INDUCED 2ND-HARMONIC GENERATION SPECTROSCOPY OF THESI(001)-SIO2 INTERFACE - SEPARATION OF THE BULK AND SURFACE NONLINEARCONTRIBUTIONS, Thin solid films, 294(1-2), 1997, pp. 231-234
Citations number
13
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
294
Issue
1-2
Year of publication
1997
Pages
231 - 234
Database
ISI
SICI code
0040-6090(1997)294:1-2<231:DE2GSO>2.0.ZU;2-3
Abstract
D.c. electric field induced second-harmonic generation (SHG) spectrosc opy of the Si(001)-SiO2 interface was studied both experimentally and theoretically. To describe the experimental results the general phenom enological model of d.c. induced SHG in centrosymmetric semiconductors is developed, taking into account surface and bulk field dependent as well as field independent contributions to the non-linear polarizatio n. The solution of an inverse problem within this model of d.c. induce d SHG allows all surface and bulk contributions to the non-linear resp onse from an Si(001)-SiO2 interface to be distinguished.