A suppression of the emitter crowding effect has been studied in a tun
nel MOS emitter Auger transistor. The redistribution of the potential
of an induced base along the emitter occurs through the activation of
an intrinsic source of minority carriers-Auger ionization caused by in
jected electrons. Non-one-dimensional effects arising from the Auger p
rocess have been revealed both in the a.c. and d.c. characteristics of
the Auger transistor.