NON-ONE-DIMENSIONAL EFFECTS IN TUNNEL MOS DEVICES

Authors
BELOV SV VEXLER MI GREKHOV IV SHULEKIN AF
Citation
Sv. Belov et al., NON-ONE-DIMENSIONAL EFFECTS IN TUNNEL MOS DEVICES, Thin solid films, 294(1-2), 1997, pp. 281-283
Citations number
5
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
294
Issue
1-2
Year of publication
1997
Pages
281 - 283
Database
ISI
SICI code
0040-6090(1997)294:1-2<281:NEITMD>2.0.ZU;2-#
Abstract
A suppression of the emitter crowding effect has been studied in a tun nel MOS emitter Auger transistor. The redistribution of the potential of an induced base along the emitter occurs through the activation of an intrinsic source of minority carriers-Auger ionization caused by in jected electrons. Non-one-dimensional effects arising from the Auger p rocess have been revealed both in the a.c. and d.c. characteristics of the Auger transistor.