INFRARED-SENSITIVE SIGE-SI HETEROJUNCTION INTERNAL PHOTOEMISSION DETECTORS PRODUCED BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION

We report the growth of Si1-XGeX on Si by rapid thermal chemical vapou r deposition (RTCVD) for heterojunction internal photoemission (HIP) p hotodiodes. The emitter is a heavily in situ boron-doped SiGe layer wi th a Ge content of up to 46%. Photodiodes are characterized by Richard son plot analysis and Fourier transform infrared spectroscopy. A strai ned layer containing 30% Ge results in a device working at temperature s of up to 80K, with a cut-off wavelength of 8.5 mu m. First results w ith a polycrystalline SiGe emitter layer are also presented, opening t he possibility of fabricating stacked optoelectronic devices.