SIMULATION OF A SUBMICRON 3C-SIC BALLISTIC DIODE BASED ON THE LEI-TING HYDRODYNAMIC BALANCE-EQUATIONS

Authors
WENG XM CUI HL
Citation
Xm. Weng et Hl. Cui, SIMULATION OF A SUBMICRON 3C-SIC BALLISTIC DIODE BASED ON THE LEI-TING HYDRODYNAMIC BALANCE-EQUATIONS, Journal of applied physics, 83(6), 1998, pp. 3129-3133
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
83
Issue
6
Year of publication
1998
Pages
3129 - 3133
Database
ISI
SICI code
0021-8979(1998)83:6<3129:SOAS3B>2.0.ZU;2-K
Abstract
Numerical simulation of a submicron 3C-SiC n(+)-n-n(+) ballistic diode , based upon the recently developed Lei-Ting hydrodynamic balance equa tions, is presented. The electron velocity, electron density, electron temperature, and the electrical potential distributed along the diode are obtained under different bias voltages. (C) 1998 American Institu te of Physics.