ULTRASHALLOW JUNCTIONS IN SI USING DECABORANE - A MOLECULAR-DYNAMICS SIMULATION STUDY

The feasibility of using decaborane B10H14, for the manufacture of sha llow junctions in Si is investigated by means of molecular dynamics si mulations. Bombardment energies of 1, 2, and 4 keV are investigated an d the simulations run for up to 7 ps in order to ascertain the implant ation profiles of the B atoms, the whereabouts of the H from the impac ted molecule and the damage to the lattice. The simulations show that if a small binding energy of the B atom in the Si lattice is assumed t hen most of the B from the cluster is implanted. The implantation dist ributions are flatter with depth than those for single B interactions and the surface layers undergo damage and amorphisation in the proximi ty of the impact. (C) 1998 American Institute of Physics.