A PHENOMENOLOGICAL MODEL FOR SYSTEMATIZATION AND PREDICTION OF DOPINGLIMITS IN II-VI AND I-III-VI2 COMPOUNDS

Semiconductors differ widely in their ability to be doped. As their ba nd gap increases, it is usually possible to dope them either n or p ty pe, but not both. This asymmetry is documented here, and explained phe nomenologically in terms of the ''doping pinning rule.'' (C) 1998 Amer ican Institute of Physics.