DEPENDENCE OF CARRIER LIFETIME AND RESISTIVITY ON ANNEALING IN INP GROWN BY HE-PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY

Authors
KANG JU FRANKEL MY ESMAN RD THOMPSON DA ROBINSON BJ
Citation
Ju. Kang et al., DEPENDENCE OF CARRIER LIFETIME AND RESISTIVITY ON ANNEALING IN INP GROWN BY HE-PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY, Journal of applied physics, 83(6), 1998, pp. 3423-3425
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
83
Issue
6
Year of publication
1998
Pages
3423 - 3425
Database
ISI
SICI code
0021-8979(1998)83:6<3423:DOCLAR>2.0.ZU;2-2
Abstract
We have experimentally investigated the carrier lifetime and resistivi ty versus anneal temperature in InP films grown by He-plasma-assisted molecular beam epitaxy. This material is shown to exhibit picosecond c arrier lifetime with high resistivity even after anneal at temperature s up to 700 degrees C. (C) 1998 American Institute of Physics.