A 1.6-GHZ CURRENT-CONTROLLED OSCILLATOR WITH INTEGRATED INDUCTOR

A 1.6 GHz fully monolithic silicon bipolar LC current-controlled oscil lator (CCO) circuit implemented in a 0.8 mu m BiCMOS technology and ch aracterized for use in wireless applications is presented. The integra ted resonator circuit uses high speed (18 GHz) bipolar transistors, a 14 nH rectangular spiral inductor fabricated by using a standard 2-lev el metallization, and a wideband pn-varactor structure. Additionally, to save chip area, the integrated capacitors were fabricated below the planar inductor structure. In order to aid the IC design, a simple eq uivalent circuit model for the integrated inductor on silicon was deve loped and tested. The measured quiescent power dissipation of the inte grated CCO circuit is 1.9 mW to 5.5 mW from a supply of 2-3 V, and a t ypical phase noise varies from -82 to -86 dBc/Hz at 100 kHz offset.