P. Zhu et H. Tenhunen, DESIGN AND ANALYSIS OF A CMOS SWITCHED-CURRENT SIGMA-DELTA MODULATOR USING MULTI LEVEL SIMULATIONS, Analog integrated circuits and signal processing, 15(2), 1998, pp. 153-168
This paper presents the design of a 3.3V CMOS switched-current (SI) se
cond-order sigma-delta modulator for A/D converters intended for radio
front-end applications. The effects of non-ideal behaviours of the bu
ilding blocks on the total performance of a SI double-integrator sigma
-delta modulator (DISDM) were analysed and simulated by means of multi
level (SpectreHDL-level, transistor-level) and mixed level simulation
s. The implementation of a SI DISDM concerning the practical issues is
discussed. A second-generation cascode SI integrator was optimized to
meet the desired speed and to diminish the non-ideal errors. The SI D
ISDM can operate at the sampling rate of 80MHz and over based on the p
arasitic-extracted transistor-level simulations.