DESIGN AND ANALYSIS OF A CMOS SWITCHED-CURRENT SIGMA-DELTA MODULATOR USING MULTI LEVEL SIMULATIONS

Authors
Citation
P. Zhu et H. Tenhunen, DESIGN AND ANALYSIS OF A CMOS SWITCHED-CURRENT SIGMA-DELTA MODULATOR USING MULTI LEVEL SIMULATIONS, Analog integrated circuits and signal processing, 15(2), 1998, pp. 153-168
Citations number
29
Categorie Soggetti
Computer Science Hardware & Architecture","Engineering, Eletrical & Electronic","Computer Science Hardware & Architecture
ISSN journal
09251030
Volume
15
Issue
2
Year of publication
1998
Pages
153 - 168
Database
ISI
SICI code
0925-1030(1998)15:2<153:DAAOAC>2.0.ZU;2-7
Abstract
This paper presents the design of a 3.3V CMOS switched-current (SI) se cond-order sigma-delta modulator for A/D converters intended for radio front-end applications. The effects of non-ideal behaviours of the bu ilding blocks on the total performance of a SI double-integrator sigma -delta modulator (DISDM) were analysed and simulated by means of multi level (SpectreHDL-level, transistor-level) and mixed level simulation s. The implementation of a SI DISDM concerning the practical issues is discussed. A second-generation cascode SI integrator was optimized to meet the desired speed and to diminish the non-ideal errors. The SI D ISDM can operate at the sampling rate of 80MHz and over based on the p arasitic-extracted transistor-level simulations.