FEED-RATE-LIMITED AEROSOL-ASSISTED CHEMICAL-VAPOR-DEPOSITION OF CDXZN1-XS AND ZNS-MN WITH COMPOSITION CONTROL

Doped group 12 metal sulfides are important materials in the phosphor display industry. Control over the host lattice phase, composition, an d dopant concentration is crucial for controlling the luminescence cha racteristics of these materials. Ternary thin films of CdxZn1-xS and Z nS:Mn were deposited by aerosol-assisted chemical vapor deposition (AA CVD) using liquid delivery of toluene solutions of new single-source Z n-S and Cd-S precursors M(SOCC(CH3)(3))(2)TMEDA (M = Cd, Zn; TMEDA = N ,N,N,N-tetramethylethylenediamine) and Mn-2(CO)(10) as a source of Mn. Control over film composition, wherein the precursor solution and fil m stoichiometries were identical, was achieved by using feed-rate-limi ted deposition conditions. Films with compositions Cd0.75Zn0.25S, Cd0. 50Zn0.50S, and Cd0.25Zn0.75S were deposited at 225 degrees C from 10 m mol solutions with the same Cd:Zn precursor mole ratios, respectively. A series of control experiments in which the precursor feed rate was varied confirmed the presence of feed-rate-limited film growth. Films of ZnS:Mn with 1-8 at. % Mn dopant levels were also deposited from sol utions with the same Zn:Mn precursor mole ratios, respectively, using feed-rate-limited deposition strategies.