Ff. Komarov et al., DISTRIBUTION OF IMPLANTED IMPURITIES AND DEPOSITED ENERGY IN HIGH-ENERGY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 124(4), 1997, pp. 478-483
A new model of high-energy ion implantation based on the Fokker-Planck
equation is proposed. An effective adaptive algorithm for the numeric
al solution of the problem is developed. Simulation of implantation of
B into S at energies ranging from 10 to 100 MeV was carried out. Resu
lts show good agreement with experimental data and with Monte Carlo ca
lculations.