STUDY OF ELECTRONIC-PROPERTIES AND DEPTH PROFILES OF BURIED AND NEAR-SURFACE SILICON-NITRIDE LAYERS PRODUCED BY ION-IMPLANTATION

Buried and near-surface silicon nitride layers with thicknesses rangin g from 300 to 20 nm were produced by implanting N-15 and N-14 ions wit h 200, 30 and 5 keV/atom in [100] silicon at room temperature under hi gh vacuum conditions. The stoichiometric N/Si ratio of 1.33 in the max imum of the nitrogen depth distributions was adjusted by the fluence. Rutherford backscattering spectroscopy, resonant nuclear reaction anal ysis and I-V measurements were used to analyse the silicon nitride lay ers. The specimens were heated up to 1200 degrees C in order to invest igate the influence of the annealing treatment on the electrical prope rties of the silicon nitride layers. It was observed that the prevaili ng current conduction mechanism of as-implanted and annealed specimens is the Frenkel-Poole-emission.