LOW-TEMPERATURE GROWTH OF REACTIVE PARTIALLY-IONIZED BEAM DEPOSITED ALN FILMS

Authors
XIE JQ MO QW FENG JY
Citation
Jq. Xie et al., LOW-TEMPERATURE GROWTH OF REACTIVE PARTIALLY-IONIZED BEAM DEPOSITED ALN FILMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 124(4), 1997, pp. 519-522
Citations number
15
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
124
Issue
4
Year of publication
1997
Pages
519 - 522
Database
ISI
SICI code
0168-583X(1997)124:4<519:LGORPB>2.0.ZU;2-6
Abstract
We have grown aluminum nitride thin films on quartz and Si(111) substr ates by reactive partially ionized beam deposition, using Al as evapor ation material and N-2 as reactive gas, respectively. We show the resu lts of film characterization by Fourier transform infrared spectroscop y, ultraviolet-visible spectroscopy, X-ray photoelectron spectroscopy and X-ray diffraction, which establish the growth of aluminum nitride thin films at the substrate temperature of 200 degrees C. X-ray diffra ction results show that the acceleration voltage is a major parameter influencing the crystal structure of the films.