GENERATION OF HARD X-RAY-RADIATION BY IRRADIATION OF POROUS SILICON WITH ULTRAINTENSE FEMTOSECOND LASER-PULSES

Authors
VOLKOV RV GORDIENKO VM DZHIDZHOEV MS KAMENEV BV KASHKAROV PK PONOMAREV YV SAVELEV AB TIMOSHENKO VY SHASHKOV AA
Citation
Rv. Volkov et al., GENERATION OF HARD X-RAY-RADIATION BY IRRADIATION OF POROUS SILICON WITH ULTRAINTENSE FEMTOSECOND LASER-PULSES, Quantum electronics, 28(1), 1998, pp. 1-2
Citations number
13
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Quantum electronics → ACNP
ISSN journal
10637818
Volume
28
Issue
1
Year of publication
1998
Pages
1 - 2
Database
ISI
SICI code
1063-7818(1998)28:1<1:GOHXBI>2.0.ZU;2-X
Abstract
Irradiation of a porous (with porosity in excess of 70%) silicon targe t with femtosecond laser pulses of 10(16) W cm(-2) intensity increased by a factor of 3.5 the efficiency of generation of hard x-ray radiati on with photon energies E > 2.5 keV. The increase was 30-fold for E > 8 keV. The relationship between this effect and the parameters of the luminescence emitted by porous silicon was investigated.