GAIN CHARACTERISTICS OF INGAN GAN QUANTUM-WELL DIODE-LASERS/

Authors
SONG YK KUBALL M NURMIKKO AV BULMAN GE DOVERSPIKE K SHEPPERD ST WEEKS TW LEONARD M KONG HS DIERINGER H EDMOND J
Citation
Yk. Song et al., GAIN CHARACTERISTICS OF INGAN GAN QUANTUM-WELL DIODE-LASERS/, Applied physics letters, 72(12), 1998, pp. 1418-1420
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
12
Year of publication
1998
Pages
1418 - 1420
Database
ISI
SICI code
0003-6951(1998)72:12<1418:GCOIGQ>2.0.ZU;2-B
Abstract
We have investigated spectroscopically the gain characteristics of InG aN quantum well (QW) diode lasers. While the transparency condition ca n be reached at a moderate current density, the filling of localized b and-edge states is a prerequisite for achieving lasing in this profoun dly nonrandom alloy. (C) 1998 American Institute of Physics.