STRAIN RELAXATION OF INGAAS GAAS SUPERLATTICES BY WET OXIDATION OF UNDERLYING ALAS LAYER/

The effects of AlAs wet oxidation on overlayers were investigated usin g InGaAs/GaAs strained-layer superlattice structures grown on an AlAs layer. The superlattice partially relaxes towards its equilibrium spac ing as the result of the oxidation of the underlying AlAs layer. Doubl e-crystal x-ray diffraction measurements were used to determine the de gree of strain relaxation. Larger relaxation is observed for the sampl e with a higher indium composition and a thicker AlAs layer. (C) 1998 American Institute of Physics.