DEMONSTRATION OF CASCADE PROCESS IN INAS GAINSB/ALSB MIDINFRARED LIGHT-EMITTING DEVICES/

We demonstrate the cascade process in mid-infrared electroluminescent InAs/GaInSb/AlSb multi-quantum-well devices. We report the proportiona l relation between the emitted optical power and the number of periods . This observed scaling is associated with the sequential transport of electrons from one active region to the next situated downstream in p otential energy through the injection region. Deviations from this exa ct scaling are correlated with the variation of the wafer-to-wafer str uctural quality. (C) 1998 American Institute of Physics.