ETCHING CHARACTERISTICS OF SI AND SIO2 WITH A LOW-ENERGY ARGON HYDROGEN DC PLASMA SOURCE/

Citation
A. Strass et al., ETCHING CHARACTERISTICS OF SI AND SIO2 WITH A LOW-ENERGY ARGON HYDROGEN DC PLASMA SOURCE/, Surface & coatings technology, 97(1-3), 1997, pp. 158-162
Citations number
6
ISSN journal
02578972
Volume
97
Issue
1-3
Year of publication
1997
Pages
158 - 162
Database
ISI
SICI code
0257-8972(1997)97:1-3<158:ECOSAS>2.0.ZU;2-F
Abstract
The effect of a low energy argon/hydrogen are discharge on the etch ra te of silicon and silicon dioxide is investigated with respect to ultr ahigh vacuum (UHV) wafer cleaning. At room temperature. the reaction s peed depends on the partial pressure oi the H radicals and the dischar ge current. Furthermore, the etch rates show Arrhenius dependence vers us substrate temperature with negative activation energies of -1.7 kca l mol(-1) and -0.7 kcal mol(-1) for Si and SiO2, respectively. The pro cess window to operate the plasma source is very large, thereby showin g a high grade of reliability for standard wafer cleaning under UHV co nditions. (C) 1997 Elsevier Science S.A.