PULSED-LASER DEPOSITION OF CRYSTALLINE PZT THIN-FILMS

Sintered targets of Pb0.52Ti0.48O3 are used in a pulsed laser depositi on (PLD) process to deposit thin ferroelectric films onto a Pt/Ti/Si(l ll) substrate for electrical applications. Repetition rates vary betwe en 1 and 200 Hz, the deposition temperature ranges from 500-800 degree s C. After thin film deposition the films are treated with different p ost-annealing procedures. The influence of repetition rate, deposition temperature and post-annealing procedures on the morphology, stoichio metry, crystalline phase, and the resulting electrical properties of t he deposited films is investigated. Analytical methods used are scanni ng electron microscopy, X-ray photoelectron spectroscopy, X-ray diffra ction, micro-Raman spectroscopy, and impedance measurements. A model f or the dependence of film thickness and stoichiometry on repetition ra te and substrate temperature is presented and compared to the experime ntal results. (C) 1997 Elsevier Science S.A.