THIN-FILM PROCESSING BY RADIO-FREQUENCY HOLLOW CATHODES

Citation
L. Bardos et al., THIN-FILM PROCESSING BY RADIO-FREQUENCY HOLLOW CATHODES, Surface & coatings technology, 97(1-3), 1997, pp. 723-728
Citations number
32
ISSN journal
02578972
Volume
97
Issue
1-3
Year of publication
1997
Pages
723 - 728
Database
ISI
SICI code
0257-8972(1997)97:1-3<723:TPBRHC>2.0.ZU;2-Q
Abstract
The main features of the radio frequency (RF) hollow cathodes for thin film processing are summarized. The utilization of cylindrical RF hol low cathodes in both the plasma-enhanced chemical vapour deposition (P ECVD) and the physical vapour deposition (PVD) of films is reviewed. A n example of the high rate PECVD of Si-N films is described in more de tail. Gas metastables excited inside the cathode can act as a source o f additional heat, thereby enhancing the thermionic electron emission and ionization of the gas. Transition from the glow into a hot cathode are regime is characterized by changes in the plasma parameters and c onsequently in the growth of films. Examples for PVD of TIN films are shown. Magnetic focusing in the linear are discharge source leads to t he formation of linear hot zones at the outlet of the parallel-plate c athode and enables the hollow cathode discharges to be scaled up for l arge area applications. (C) 1997 Elsevier Science S.A.