FERROELECTRIC CHARACTERISTICS OF SRBI2TA2O9 THIN-FILMS FABRICATED BY THE RADIO-FREQUENCY MAGNETRON SPUTTERING DEPOSITION TECHNIQUE

SrBi(2)Ta(2)O(9)thin films were successfully fabricated by the radio f requency magnetron sputtering deposition method. The crystal structure of SrBi2Ta2O9 thin films grown on the Pt(111) layer was preferentiall y c-axis oriented. Surface microstructure shows the mixture of two kin ds of morphologies. The Pt/SBTO/Pt capacitor shows P-r() - P-r(boolea n AND) = 16.3 mu C/cm(2) and E-c = 50 kV/cm. After a fatigue test, the polarization versus electric field loop shifted toward a positive ele ctric field. The interface between platinum and titanium layer was cha nged by the inter-diffusion of the Pt, Ti, O atoms after post-annealin g at 800 degrees C for 2 h. (C) 1998 Elsevier Science S.A.