DEPOSITION OF ALUMINUM NITRIDE FILMS BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

An electron cyclotron resonance plasma source was used for the deposit ion of aluminium nitride (AlN). AlN films were grown using trimethyl a luminium in hydrogen as carrier gas and nitrogen or ammonia as a nitro gen source onto silicon, glass and steel substrates. The deposition te mperature was ranging from 200 to 600 degrees C, the microwave power w as varied from 250 to 400 W and the operation pressure was (1-4) x 10( -3) mbar. Atomic composition of the samples was investigated by Auger electron spectrometry and Fourier transform IR spectrometry and mechan ical properties were investigated by a dynamic force-penetration metho d and scratch test. The influence of the deposition parameters on the structure and hardness were investigated. The incorporation of oxygen into the AlN films after the deposition is caused by diffusion of wate r along the grain boundaries of textured layers. Universal hardness of 10000 N mm(-2) and critical loads up to 42 N were found for AlN coati ngs on steel substrates. (C) 1998 Published by Elsevier Science S.A.